Kazuhide Kumakura

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka et al. · Nature · 2012 · 419 citations

Materials Science, Layered Boron, Electrical Engineering +7

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Kazuhide Kumakura, Toshiki Makimōto, Nobuhiko P. Kobayashi et al. · Applied Physics Letters · 2005 · 223 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Mg-acceptor activation mechanism and transport characteristics in <i>p</i>-type InGaN grown by metalorganic vapor phase epitaxy

Kazuhide Kumakura, Toshiki Makimōto, Naoki Kobayashi · Journal of Applied Physics · 2003 · 134 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_1-xN (x&lt;0.2)

Kazuhide Kumakura, Toshiki Makimōto, Naoki Kobayashi · Japanese Journal of Applied Physics · 2000 · 105 citations

Activation Energy, Wide-bandgap Semiconductor, Electrical Engineering +15

Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Tamotsu Hashizume, S. Anantathanasarn, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2004 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11