Noboru Negoro

Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Tamotsu Hashizume, S. Anantathanasarn, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2004 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Kazushi Matsuo, Noboru Negoro, Junji Kotani et al. · Applied Surface Science · 2005 · 73 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices

Shuichi Nagai, Noboru Negoro, Takeshi Fukuda et al. · 2012 · 41 citations

Gan Power Hfets, Electrical Engineering, Engineering +14

A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation

Takeshi Fukuda, Noboru Negoro, Shinji Ujita et al. · IEEE MTT-S International Microwave Symposium digest · 2007 · 27 citations

Radar, Ingap/gaas Hbt Process, Ghz Short-range Radar +9

Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy

Hideki Hasegawa, Noboru Negoro, Seiya Kasai et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 26 citations

Engineering, Ultrathin Si Layer, Semiconductor Nanostructures +18