S. Anantathanasarn

Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Tamotsu Hashizume, S. Anantathanasarn, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2004 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven et al. · Applied Physics Letters · 2006 · 85 citations · Full text

Materials Science, Photonics, Optical Pumping +10

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm

Martijn J. R. Heck, E.A.J.M. Bente, Barry Smalbrugge et al. · Optics Express · 2007 · 70 citations · Full text

Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

R. Nötzel, S. Anantathanasarn, René P. J. van Veldhoven et al. · Japanese Journal of Applied Physics · 2006 · 68 citations · Full text

Categoryquantum Electronics, Optical Materials, Engineering +25

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven et al. · Journal of Applied Physics · 2005 · 61 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +23