Concepedia

S. Anantathanasarn

SA

Statistics

Publications

21

Citations

737

H-Index

16

Active since

2000

Affiliations

Eindhoven University of Technology(Current)

Hokkaido University

NTT Basic Research Laboratories

S. Anantathanasarn is an author at Eindhoven University of Technology specializing in engineering, materials science, and optoelectronics.

Publications per year

2000–2009

21

Publications

21

Al<sub>2</sub>O<sub>3</sub> Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Tamotsu Hashizume, S. Anantathanasarn, Noboru Negoro et al. · Japanese Journal of Applied Physics · 2004 · 88 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven et al. · Applied Physics Letters · 2006 · 85 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm

Martijn J. R. Heck, E.A.J.M. Bente, Barry Smalbrugge et al. · Optics Express · 2007 · 70 citations · Full text

Engineering, Electrical Engineering, Physics +17

Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

R. Nötzel, S. Anantathanasarn, René P. J. van Veldhoven et al. · Japanese Journal of Applied Physics · 2006 · 69 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven et al. · Journal of Applied Physics · 2005 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +17

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