Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Abstract

The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control of the InAs QDs in an InGaAsP∕InP waveguide is based on the suppression of As∕P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580A∕cm2 and low transparency current density of 6A∕cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.