Germain Servanton

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven et al. · Applied Physics Letters · 2006 · 85 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Evidence of atomic-scale arsenic clustering in highly doped silicon

S. Duguay, F. Vurpillot, T. Philippe et al. · Journal of Applied Physics · 2009 · 30 citations

Natural Sciences, Materials Science, Physics +12

Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS–EDX spectroscopy

Germain Servanton, R. Pantel, M. Juhel et al. · Micron · 2009 · 25 citations

Engineering, Materials Engineering, Materials Science +11

Field Mapping with Nanometer-Scale Resolution for the Next Generation of Electronic Devices

David Cooper, Francisco de la Peña, Armand Béché et al. · Nano Letters · 2011 · 23 citations

Engineering, Materials Science, Physics +17

Si and SiGe faceting during selective epitaxy

Clément Pribat, Germain Servanton, Linda Depoyan et al. · Solid-State Electronics · 2009 · 18 citations

Engineering, Materials Engineering, Materials Science +12