M. Juhel

Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments

E. V. K. Rao, A. Ougazzaden, Y. Le Bellégo et al. · Applied Physics Letters · 1998 · 174 citations

Optical Materials, Post-growth Treatments, Engineering +17

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

A. Ougazzaden, Y. Le Bellégo, E. V. K. Rao et al. · Applied Physics Letters · 1997 · 99 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

J. Etrillard, P. Ossart, G. Patriarche et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 52 citations

Engineering, Sidewall Damage, Plasma Processing +18

Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

J. Etrillard, F. Héliot, P. Ossart et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 39 citations

Ch4/h2/o2 Gas Mixture, Engineering, Chemistry +18

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Federico Panciera, K. Hoummada, M. Grégoire et al. · Applied Physics Letters · 2011 · 34 citations

Selective Etching, Engineering, Nisi Contact +20