E. V. K. Rao

Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments

E. V. K. Rao, A. Ougazzaden, Y. Le Bellégo et al. · Applied Physics Letters · 1998 · 174 citations

Natural Sciences, Materials Engineering, Materials Science +17

GaNAsSb: how does it compare with other dilute III V-nitride alloys?

A. Caliman, E. V. K. Rao, L. Largeau et al. · Semiconductor Science and Technology · 2002 · 100 citations

Engineering, Materials Engineering, Materials Science +17

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

A. Ougazzaden, Y. Le Bellégo, E. V. K. Rao et al. · Applied Physics Letters · 1997 · 99 citations

Engineering, Materials Engineering, Materials Science +15

Chemical beam epitaxy of indium phosphide

J.L. Benchimol, F. Alaoui, Yang Gao et al. · Journal of Crystal Growth · 1990 · 72 citations

Engineering, Materials Engineering, Materials Science +12

Disordering of Ga1−<i>x</i>Al<i>x</i>As-GaAs quantum well structures by donor sulfur diffusion

E. V. K. Rao, H. Thibierge, F. Brillouet et al. · Applied Physics Letters · 1985 · 63 citations

Engineering, Materials Science, Physics +17