J.L. Benchimol - Concepedia

Author

J.L. Benchimol

Also Known As

Benchimol, J.L., J L Benchimol, J. BENCHIMOL, J. Benchimol, J. L. Benchimol, J.-L. Benchimol, J.L Benchimol, J.L. Benchimol, Jean L. Benchimol, Jean L. Benchimol Jean L. Benchimol

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Orange (France)Centre National de la Recherche Scientifique Deleted Institution

About

J.L. Benchimol is an author at Orange (France) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	37	949
2	Applied Physics	17	33	865
3	Natural Sciences	2	2	26
4	Health Sciences	1	1	44
5	Chemical Engineering	1	1	11

J.L. Benchimol

Publications

991

Citations

H-Index

Page 1

	Year	Citations
Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy Nobuhiko P. Kobayashi, J.L. Benchimol, F. Alexandre, Applied Physics Letters Materials ScienceWeak DesorptionGaas MombeGaas GrowthGaalas Growth Rates	1987	118
Chemical beam epitaxy of indium phosphide J.L. Benchimol, F. Alaoui, Yang Gao, Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsMolecular Beam EpitaxyChemical Beam Epitaxy	1990	72
In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy M. Quillec, C. Daguet, J.L. Benchimol, Applied Physics Letters EngineeringCrystal Growth TechnologyQuantum MaterialsUnstable RegionMolecular Beam Epitaxy	1982	72
Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys J.L. Benchimol, G. Le Roux, H. Thibierge, Journal of Crystal Growth Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringGainasp Alloys	1991	50
DEHYDRATION KINETICS AND MODELLING E. Kompany, J.L. Benchimol, Karim Allaf, Drying Technology EngineeringAgricultural EconomicsFood PreservationThermal ProcessingFood Chemistry	1993	44
Raman scattering in In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> quaternary alloys R. K. Soni, S. C. Abbi, K. P. Jain, Journal of Applied Physics Materials ScienceEngineeringPhysicsCrystal MaterialOptical Properties	1986	39
Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy J.L. Benchimol, F. Alexandre, Yang Gao, Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsGrowth Parameter DependenceMolecular Beam Epitaxy	1989	35
MSI InP/InGaAs DHBT technology: beyond 40 Gbit/s circuits Sylvain Blayac, M. Riet, J.L. Benchimol, Electrical EngineeringEngineeringRf SemiconductorAdvanced Packaging (Semiconductors)Electronic Engineering	2003	35
Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy F. Alexandre, J.L. Benchimol, J. Dangla, Electronics Letters SemiconductorsElectrical EngineeringElectronic DevicesEngineeringBeryllium Base Doping	1990	33
Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy J.L. Benchimol, F. Alexandre, C. Dubon‐Chevallier, Electronics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1992	31

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