J.L. Benchimol

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

Nobuhiko P. Kobayashi, J.L. Benchimol, F. Alexandre et al. · Applied Physics Letters · 1987 · 118 citations

Materials Science, Weak Desorption, Gaas Mombe +10

Chemical beam epitaxy of indium phosphide

J.L. Benchimol, F. Alaoui, Yang Gao et al. · Journal of Crystal Growth · 1990 · 72 citations

Materials Science, Engineering, Applied Physics +3

In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

M. Quillec, C. Daguet, J.L. Benchimol et al. · Applied Physics Letters · 1982 · 72 citations

Engineering, Crystal Growth Technology, Quantum Materials +17

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge et al. · Journal of Crystal Growth · 1991 · 50 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10

DEHYDRATION KINETICS AND MODELLING

E. Kompany, J.L. Benchimol, Karim Allaf et al. · Drying Technology · 1993 · 44 citations

Engineering, Agricultural Economics, Food Preservation +16