H. Thibierge

Devitrification characteristics of Ge Se1− glasses

R. Azoulay, H. Thibierge, Alain Brenac · Journal of Non-Crystalline Solids · 1975 · 179 citations

Disordering of Ga1−<i>x</i>Al<i>x</i>As-GaAs quantum well structures by donor sulfur diffusion

E. V. K. Rao, H. Thibierge, F. Brillouet et al. · Applied Physics Letters · 1985 · 63 citations

Materials Science, Semiconductors, Engineering +12

Investigation of surface roughness of molecular beam epitaxy Ga1−<i>x</i>Al<i>x</i>As layers and its consequences on GaAs/Ga1−<i>x</i>Al<i>x</i>As heterostructures

F. Alexandre, Leon J. Goldstein, G. Leroux et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 59 citations

Materials Science, Semiconductors, Layer Thickness +14

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge et al. · Journal of Crystal Growth · 1991 · 50 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose et al. · Journal of Electronic Materials · 1986 · 35 citations

Materials Science, Ii-vi Semiconductor, Engineering +4