Devitrification characteristics of Ge Se1− glasses

R. Azoulay, H. Thibierge, Alain Brenac

Journal of Non-Crystalline Solids

Disordering of Ga1−<i>x</i>Al<i>x</i>As-GaAs quantum well structures by donor sulfur diffusion

E. V. K. Rao, H. Thibierge, F. Brillouet, +2

Applied Physics Letters

Materials ScienceSemiconductorsEngineeringGaalas-gaas QuantumCrystalline Defects +10

Investigation of surface roughness of molecular beam epitaxy Ga1−<i>x</i>Al<i>x</i>As layers and its consequences on GaAs/Ga1−<i>x</i>Al<i>x</i>As heterostructures

F. Alexandre, Leon J. Goldstein, G. Leroux, +3

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsLayer ThicknessSurface CharacterizationEngineering +12

Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

J.L. Benchimol, G. Le Roux, H. Thibierge, +3

Journal of Crystal Growth

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringGainasp Alloys +8

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose, +7

Journal of Electronic Materials

Materials ScienceIi-vi SemiconductorEngineeringAtmospheric-pressure MovpeApplied Physics +2

New encapsulant source for III–V quantum well disordering

E. V. K. Rao, A. Hamoudi, Ph. Krauz, +2

Applied Physics Letters

SemiconductorsQuantum ScienceMaterials ScienceEngineeringPhysics +12

Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices

E. V. K. Rao, P. Ossart, F. Alexandre, +1

Applied Physics Letters

Materials ScienceGaas-ga0.72al0.28as SuperlatticesBoron NitrideEngineeringPhysics +10

Silicon implantation in semi-insulating bulk InP; Electrical and photoluminescence measurements

N. Duhamel, E. V. K. Rao, M. Gauneau, +2

Journal of Crystal Growth

Electrical EngineeringIon ImplantationEngineeringPhysicsApplied Physics +7

Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio

A. Hamoudi, A. Ougazzaden, Ph. Krauz, +3

Applied Physics Letters

Categoryquantum ElectronicsIn–ga Interdiffusion CoefficientEngineeringIngaas/gaas SystemsConstant P/as Ratio +14

Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells

E. V. K. Rao, P. Ossart, H. Thibierge, +2

Applied Physics Letters

EngineeringIn0.53ga0.47as-in0.52al0.48as Multiquantum WellsGroup IiiChemistryIi-vi Semiconductor +18