Concepedia

Author

G. Leroux

Centre National de la Recherche Scientifique

Also Known As

G. Le-Roux, G. LeRoux, G. Leroux, G.P. Leroux

18

Publications

269

Citations

9

H-Index

24

Concepts

All Affiliations

Centre National de la Recherche ScientifiqueOrange (France)
GL

About

G. Leroux is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

8

8

220

2

Applied Physics

8

8

220

3

Materials Science

4

4

127

4

Electrical Engineering

1

1

33

5

Materials Engineering

1

1

15

G. Leroux

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8

Publications

220

Citations

8

H-Index

YearCitations

Investigation of surface roughness of molecular beam epitaxy Ga1−<i>x</i>Al<i>x</i>As layers and its consequences on GaAs/Ga1−<i>x</i>Al<i>x</i>As heterostructures

F. Alexandre, Leon J. Goldstein, G. Leroux,

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

1985

59

Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers

J. Mangeney, H. Choumane, G. Patriarche,

Applied Physics Letters

2001

35

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose,

Journal of Electronic Materials

1986

35

Ga<sub>0.72</sub>Al<sub>0.28</sub>As/Ga<sub>0.99</sub>Be<sub>0.01</sub>As heterojunction bipolar transistor grown by molecular beam epitaxy

J.L. Lievin, C. Dubon-Chevall, F. Alexandre,

IEEE Electron Device Letters

1986

33

GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth

G. Patriarche, Cristelle Mériadec, G. Leroux,

Applied Surface Science

2000

18

Autodoping of GaAs grown by organometallic vapor phase epitaxy on silicon substrates

R. Azoulay, N. Draïdia, Ying Gao,

Applied Physics Letters

1989

15

Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity

D. Pellat, R. Azoulay, G. Leroux,

Applied Physics Letters

1993

13

Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−<i>x</i>In<i>x</i>As/GaAs on GaAs quantum wells

Leon J. Goldstein, M. N. Charasse, A. M. Jean‐Louis,

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

1985

12

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