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Ga<sub>0.72</sub>Al<sub>0.28</sub>As/Ga<sub>0.99</sub>Be<sub>0.01</sub>As heterojunction bipolar transistor grown by molecular beam epitaxy
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Citations
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References
1986
Year
SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringElectronic MaterialsPhysicsWide-bandgap SemiconductorHeterojunction Bipolar TransistorApplied PhysicsQuantum MaterialsOptoelectronic DevicesMolecular Beam EpitaxyBase ThicknessDopant DiffusionSemiconductor Device
We report the first heterojunction bipolar transistor (HBT) with base doping level as high as 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . The device is grown by molecular beam epitaxy (MBE) with growth conditions adjusted to keep perfect surface morphology and to avoid dopant diffusion even at ultra-high doping levels. Maximum dc current gain of 10 is observed, for a base thickness of 40 nm. This is a new step in the optimization of HBT's structures for high-speed logic and microwave applications.
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