D. Ankri - Concepedia

Author

D. Ankri

Cornell University

Also Known As

D. Ankri, David Ankri

Publications

364

Citations

H-Index

Concepts

All Affiliations

Cornell University

About

D. Ankri is an author at Cornell University specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	243
2	Electrical Engineering	9	9	243
3	Applied Physics	8	8	227
4	Materials Engineering	1	1	34
5	Materials Science	1	1	34

D. Ankri

Publications

326

Citations

H-Index

Page 1

	Year	Citations
Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor J.F. Palmier, C. Minot, J.L. Lievin, Applied Physics Letters Superconducting MaterialElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1986	48
GaAlAs-GaAs ballistic hetero-junction bipolar transistor D. Ankri, L.F. Eastman Electronics Letters	1982	44
Comprehensive study of AuMn <i>p</i>-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors C. Dubon‐Chevallier, M. Gauneau, J. F. Bresse, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesMaterials Engineering	1986	34
Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation D. Ankri, A. Scavennec, C. Besombes, Applied Physics Letters Transition FrequenciesSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1982	33
Ga<sub>0.72</sub>Al<sub>0.28</sub>As/Ga<sub>0.99</sub>Be<sub>0.01</sub>As heterojunction bipolar transistor grown by molecular beam epitaxy J.L. Lievin, C. Dubon-Chevall, F. Alexandre, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1986	33
MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor R. Azoulay, L. Dugrand, D. Ankri, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsCompound SemiconductorMocvd N-type Doping	1984	32
Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors D. Ankri, R. Azoulay, E. Caquot, Solid-State Electronics	1986	27
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation D. Ankri, W. J. Schaff, Peter G. Smith, Electronics Letters Electrical EngineeringMolecular-beam EpitaxyEngineeringRf SemiconductorElectronic Engineering	1983	19
Design and evaluation of a planar GaAlAs-GaAs bipolar transistor D. Ankri, A. Scavennec Electronics Letters Emitter LayerElectrical EngineeringEngineeringRf SemiconductorBase Resistance	1980	16
Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors H. Wang, D. Ankri Electronics Letters PhotonicsElectrical EngineeringOptical MaterialsMm2 Gaas ChipEngineering	1986	16

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