L.F. Eastman - Concepedia

Author

L.F. Eastman

Also Known As

L F Eastman, L. Eastman, L. F. EASTMAN, L. F. Eastman, L.F Eastman, L.F. EASTMAN, L.F. Eastman, LESTER F. EASTMAN, Lauren Eastman, Lester Eastman

725

Publications

24.6K

Citations

H-Index

120

Concepts

All Affiliations

Cornell University

About

L.F. Eastman is an author at Cornell University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	66	279	21.3K
2	Applied Physics	66	277	21K
3	Natural Sciences	8	8	561
4	Chemistry	7	7	590
5	Chemical Engineering	1	1	120

L.F. Eastman

301

Publications

23K

Citations

H-Index

Page 1

	Year	Citations
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher, J. Smart, J. R. Shealy, Journal of Applied Physics Wide-bandgap SemiconductorPiezoelectric Polarization ChargesCarrier Concentration ProfilesEngineeringGan Channel	1999	2.9K
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, J. Smart, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringDimensional Electron GasesPiezoelectric PolarizationSemiconductors	2000	1.6K
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, Jacek A. Majewski, C. R. Miskys, Journal of Physics Condensed Matter	2002	1K
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs B.M. Green, K. Chu, Eduardo M. Chumbes, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorUndoped Algan/can Hemt	2000	720
Scattering of electrons at threading dislocations in GaN Nils Weimann, L.F. Eastman, D. Doppalapudi, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	1998	613
Transient electron transport in wurtzite GaN, InN, and AlN B. E. Foutz, Stephen K. O’Leary, M. S. Shur, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1999	552
The role of dislocation scattering in <i>n</i>-type GaN films H. M. Ng, D. Doppalapudi, T. D. Moustakas, Applied Physics Letters SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringCrystalline Defects	1998	432
Undoped AlGaN/GaN HEMTs for microwave power amplification L.F. Eastman, V. Tilak, J. Smart, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringRf Semiconductor	2001	385
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic M. S. Shur, L.F. Eastman IEEE Transactions on Electron Devices EngineeringVlsi DesignLow-power High-speed LogicPower ElectronicsSemiconductor Device	1979	295
Surface charge accumulation of InN films grown by molecular-beam epitaxy H. J. Lü, W. J. Schaff, L.F. Eastman, Applied Physics Letters Wide-bandgap SemiconductorEngineeringCharge TransportSemiconductor DeviceSemiconductors	2003	293

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