L.F. Eastman

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Wide-bandgap Semiconductor, Piezoelectric Polarization Charges, Carrier Concentration Profiles +16

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.6K citations

Wide-bandgap Semiconductor, Engineering, Dimensional Electron Gases +18

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 720 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 613 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11