Nils Weimann

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations

Engineering, Materials Science, Physics +17

The role of dislocation scattering in <i>n</i>-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1998 · 437 citations

Engineering, Materials Engineering, Materials Science +17

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations

Engineering, Electrical Engineering, Materials Science +17