J. R. Shealy

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 723 citations

Engineering, Electrical Engineering, Materials Science +17

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

Hyungtak Kim, Richard M. Thompson, V. Tilak et al. · IEEE Electron Device Letters · 2003 · 186 citations

Engineering, Electrical Engineering, Materials Science +17