O. Ambacher - Concepedia

Author

O. Ambacher

Fraunhofer Institute for Applied Solid State Physics ORCID

Also Known As

Ambacher Oliver, Ambacher, O., Ambacher, Oliver, O Ambacher, O. AMBACHER, O. Ambacher, O. Ambacher3, O.S. Ambacher, OLIVER AMBACHER, Oliver AMBACHER

961

Publications

31.9K

Citations

H-Index

243

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Technische Universität Ilmenau Schott (Germany)Technical University of Munich University of Freiburg

About

O. Ambacher is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	69	395	25.5K
2	Natural Sciences	15	19	959
3	Education	5	5	145
4	Health Sciences	4	4	191
5	Medicine	1	1	83

O. Ambacher

456

Publications

29.5K

Citations

H-Index

Page 1

	Year	Citations
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher, J. Smart, J. R. Shealy, Journal of Applied Physics Wide-bandgap SemiconductorPiezoelectric Polarization ChargesCarrier Concentration ProfilesEngineeringGan Channel	1999	2.9K
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, J. Smart, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringDimensional Electron GasesPiezoelectric PolarizationSemiconductors	2000	1.6K
Wireless sub-THz communication system with high data rate S. Koenig, D. Lopez-Diaz, J. Antes, Nature Photonics Wireless CommunicationsTerahertz NetworkTerahertz TechniqueHigh-speed NetworkingHigh Data Rate	2013	1.5K
Growth and applications of Group III-nitrides O. Ambacher Journal of Physics D Applied Physics Group Iii-nitridesWide-bandgap SemiconductorAluminium NitrideEngineeringChemistry	1998	1.4K
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, Jacek A. Majewski, C. R. Miskys, Journal of Physics Condensed Matter	2002	1K
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideNonlinear Macroscopic PolarizationPolarization Discontinuity	2002	833
Optical constants of epitaxial AlGaN films and their temperature dependence Daniel Brunner, H. Angerer, E. Bustarret, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringAl Content	1997	593
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T. Metzger, R. Höpler, E. Born, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Materials ScienceDislocation DensitiesElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	547
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications V. Cimalla, J. Pezoldt, O. Ambacher Journal of Physics D Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringMicrofabrication	2007	385
Undoped AlGaN/GaN HEMTs for microwave power amplification L.F. Eastman, V. Tilak, J. Smart, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringRf Semiconductor	2001	385

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