C. R. Miskys - Concepedia

Concepedia

Author

C. R. Miskys

Schott (Germany)

Also Known As

C Miskys, C. Miskys, C. R. MISKYS, C. R. Miskys, C.R Miskys, C.R. Miskys, Claudio Miskys, Claudio R. Miskys, Claudio Ronald Miskys, Miskys, C.R.

38

Publications

1.8K

Citations

15

H-Index

29

Concepts

All Affiliations

Schott (Germany)Technical University of Munich Cornell University Universitat de València Leipzig University

CR

About

C. R. Miskys is an author at Schott (Germany) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	749
2	Applied Physics	14	16	749
3	Electrical Engineering	9	9	397
4	Natural Sciences	1	1	87
5	Chemistry	1	1	87

C. R. Miskys

×

19

Publications

1.8K

Citations

15

H-Index

	Year	Citations
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, Jacek A. Majewski, C. R. Miskys, Journal of Physics Condensed Matter	2002	1K
AlN/diamond heterojunction diodes C. R. Miskys, José A. Garrido, Christoph E. Nebel, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringOptical MaterialsEpitaxial Nature	2003	100
Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals Alissa C. Frank, Frank Stowasser, H. Sussek, Journal of the American Chemical Society Wide-bandgap SemiconductorEngineeringAltmetric Attention ScoreSolid-state ChemistryChemistry	1998	87
GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates C. R. Miskys, M. K. Kelly, O. Ambacher, Applied Physics Letters Wide-bandgap SemiconductorEngineeringLattice-matched Gan LayersSemiconductorsMolecular Beam Epitaxy	2000	83
Freestanding GaN‐substrates and devices C. R. Miskys, Michael K. Kelly, O. Ambacher, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesLaser-induced Separation	2003	69
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures P. James Schuck, Michael D. Mason, Robert D. Grober, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesLateral Polarity Heterostructures	2001	62
Characterization of InGaN thin films using high-resolution x-ray diffraction L. Görgens, O. Ambacher, M. Stutzmann, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2000	59
Scanning x-ray excited optical luminescence microscopy in GaN Gema Martínez‐Criado, Benito Alén, A. Homs, Applied Physics Letters Materials ScienceOptical MaterialsX-ray SpectroscopyEngineeringCrystalline Defects	2006	50
Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN D. Gogova, A. Kasic, Henrik Larsson, Japanese Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringBulk-like GanOptoelectronic Devices	2004	50
Photoluminescence study of excitons in homoepitaxial GaN Gema Martínez‐Criado, C. R. Miskys, A. Cros, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorPhotoluminescenceEngineeringPhysics	2001	44

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