C. R. Miskys

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

AlN/diamond heterojunction diodes

C. R. Miskys, José A. Garrido, Christoph E. Nebel et al. · Applied Physics Letters · 2003 · 100 citations

Semiconductors, Materials Science, Electrical Engineering +14

Detonations of Gallium Azides:  A Simple Route to Hexagonal GaN Nanocrystals

Alissa C. Frank, Frank Stowasser, H. Sussek et al. · Journal of the American Chemical Society · 1998 · 87 citations

Wide-bandgap Semiconductor, Engineering, Altmetric Attention Score +17

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

C. R. Miskys, M. K. Kelly, O. Ambacher et al. · Applied Physics Letters · 2000 · 83 citations

Wide-bandgap Semiconductor, Engineering, Lattice-matched Gan Layers +19

Freestanding GaN‐substrates and devices

C. R. Miskys, Michael K. Kelly, O. Ambacher et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 69 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9