B. E. Foutz - Concepedia

Author

B. E. Foutz

Cornell University

Also Known As

B. E. Foutz, B. Foutz, B.E. Foutz, Brian E Foutz, Brian E. Foutz, Brian Edward Foutz, Brian FOUTZ, Brian Foutz

Publications

3.9K

Citations

H-Index

Concepts

All Affiliations

Cornell University Rensselaer Polytechnic Institute University of Regina Cadence Design Systems (United States)Schott (Germany)

About

B. E. Foutz is an author at Cornell University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	20	3.5K
2	Applied Physics	16	16	3.3K
3	Computer Engineering	4	4	167
4	Computer Science	3	3	145
5	Natural Sciences	1	1	90

B. E. Foutz

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, J. Smart, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringDimensional Electron GasesPiezoelectric PolarizationSemiconductors	2000	1.6K
Transient electron transport in wurtzite GaN, InN, and AlN B. E. Foutz, Stephen K. O’Leary, M. S. Shur, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1999	552
Electron transport in wurtzite indium nitride Stephen K. O’Leary, B. E. Foutz, M. S. Shur, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	1998	292
Comparison of high field electron transport in GaN and GaAs B. E. Foutz, L.F. Eastman, Udayan V. Bhapkar, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	1997	173
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices O. Ambacher, R. Dimitrov, M. Stutzmann, physica status solidi (b) Aluminium NitrideWide-bandgap SemiconductorGroup-iii NitridesEngineeringStrain Induced Piezoelectric	1999	142
Channel masking synthesis for efficient on-chip test compression Vivek Chickermane, B. E. Foutz, Brion Keller Hardware SecurityChannel Masking HardwareUnknown Logic StatesEngineeringSystem Testing	2005	120
Potential performance of indium-nitride-based devices Stephen K. O’Leary, B. E. Foutz, M. S. Shur, Applied Physics Letters Electrical EngineeringEngineeringRf SemiconductorPhysicsNanoelectronics	2006	96
Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis Stephen K. O’Leary, B. E. Foutz, M. S. Shur, Applied Physics Letters Categoryquantum ElectronicsElectrical EngineeringEngineeringPhysicsTransient Electron Transport	2005	90
Monte Carlo simulation of electron transport in wurtzite aluminum nitride Stephen K. O’Leary, B. E. Foutz, M. S. Shur, Solid State Communications Materials ScienceSemiconductorsAluminium NitrideEngineeringPhysics	1998	76
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors José A. Garrido, B. E. Foutz, J. Smart, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	2000	52

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