B. E. Foutz

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

Transient electron transport in wurtzite GaN, InN, and AlN

B. E. Foutz, Stephen K. O’Leary, M. S. Shur et al. · Journal of Applied Physics · 1999 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

Electron transport in wurtzite indium nitride

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Journal of Applied Physics · 1998 · 292 citations

Natural Sciences, Materials Science, Physics +17

Comparison of high field electron transport in GaN and GaAs

B. E. Foutz, L.F. Eastman, Udayan V. Bhapkar et al. · Applied Physics Letters · 1997 · 175 citations

Engineering, Electrical Engineering, Semiconductor Devices +16

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

O. Ambacher, R. Dimitrov, M. Stutzmann et al. · physica status solidi (b) · 1999 · 143 citations

Engineering, Materials Science, Physics +17