Concepedia

B. E. Foutz

BE

21

Publications

3.5K

Citations

18

H-Index

1997

Active since

Affiliations

Cornell University(Current)

Rensselaer Polytechnic Institute

University of Regina

Cadence Design Systems (United States)

Schott (Germany)

B. E. Foutz is an author at Cornell University specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringPhysicsSemiconductorsCondensed Matter PhysicsQuantum MaterialsMaterial ScienceElectronic DevicesQuantum Engineering

Publications per year

1997–2017

21

Publications

21

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.6K citations

Wide-bandgap Semiconductor, Engineering, Dimensional Electron Gases +18

Transient electron transport in wurtzite GaN, InN, and AlN

B. E. Foutz, Stephen K. O’Leary, M. S. Shur et al. · Journal of Applied Physics · 1999 · 552 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Electron transport in wurtzite indium nitride

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Journal of Applied Physics · 1998 · 292 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Comparison of high field electron transport in GaN and GaAs

B. E. Foutz, L.F. Eastman, Udayan V. Bhapkar et al. · Applied Physics Letters · 1997 · 173 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

O. Ambacher, R. Dimitrov, M. Stutzmann et al. · physica status solidi (b) · 1999 · 142 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Group-iii Nitrides +20

Rows per page

1–5 of 21