Stephen K. O’Leary

Transient electron transport in wurtzite GaN, InN, and AlN

B. E. Foutz, Stephen K. O’Leary, M. S. Shur et al. · Journal of Applied Physics · 1999 · 552 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

Stephen K. O’Leary, S. R. Johnson, P. K. Lim · Journal of Applied Physics · 1997 · 309 citations

Electrical Engineering, Optical Materials, Empirical Analysis +15

Electron transport in wurtzite indium nitride

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Journal of Applied Physics · 1998 · 292 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Potential performance of indium-nitride-based devices

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Applied Physics Letters · 2006 · 96 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Applied Physics Letters · 2005 · 90 citations

Categoryquantum Electronics, Electrical Engineering, Engineering +14