M. Stutzmann - Concepedia

Author

M. Stutzmann

Also Known As

M Stutzmann, M. S. Stutzmann, M. STUTZMANN, M. Stutzmann, MARTIN STUTZMANN, Martin STUTZMANN, Martin Stutzmann, Martin Stutzmann Martin Stutzmann, Stutzmann, Martin

870

Publications

34.6K

Citations

H-Index

252

Concepts

All Affiliations

Schott (Germany)Technical University of Munich Max Planck Institute for Solid State Research Palo Alto Research Center

About

M. Stutzmann is an author at Schott (Germany) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	82	395	29.3K
2	Arts	1	1	17
3	Education	1	1	22
4	Health Sciences	1	1	30
5	Humanities	1	1	20

M. Stutzmann

449

Publications

32.7K

Citations

H-Index

Page 1

	Year	Citations
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher, J. Smart, J. R. Shealy, Journal of Applied Physics Wide-bandgap SemiconductorPiezoelectric Polarization ChargesCarrier Concentration ProfilesEngineeringGan Channel	1999	2.9K
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, J. Smart, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringDimensional Electron GasesPiezoelectric PolarizationSemiconductors	2000	1.6K
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M. Stutzmann, W. B. Jackson, C. C. Tsai Physical review. B, Condensed matter Materials SciencePhotoluminescenceEngineeringPhysicsPhotochemistry	1985	1.2K
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures O. Ambacher, Jacek A. Majewski, C. R. Miskys, Journal of Physics Condensed Matter	2002	1K
The origin of visible luminescencefrom “porous silicon”: A new interpretation Martin S. Brandt, H. D. Fuchs, M. Stutzmann, Solid State Communications Materials ScienceOptical MaterialsEngineeringPhotoluminescenceNew Interpretation	1992	839
Optical constants of epitaxial AlGaN films and their temperature dependence Daniel Brunner, H. Angerer, E. Bustarret, Journal of Applied Physics Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringAl Content	1997	593
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T. Metzger, R. Höpler, E. Born, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Materials ScienceDislocation DensitiesElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	547
Protein-modified nanocrystalline diamond thin films for biosensor applications Andreas Härtl, E. Schmich, José A. Garrido, Nature Materials Diamond-like CarbonEngineeringBiosensing SystemsNanomaterialsNanotechnology	2004	518
Black nonreflecting silicon surfaces for solar cells S. Koynov, Martin S. Brandt, M. Stutzmann Applied Physics Letters Optical MaterialsEngineeringSurface NanotechnologySilicon On InsulatorPhotovoltaics	2006	431
Chemical control of the charge state of nitrogen-vacancy centers in diamond Moritz V. Hauf, Bernhard Grotz, Boris Naydenov, Physical Review B	2011	356

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