M. Stutzmann

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Wide-bandgap Semiconductor, Piezoelectric Polarization Charges, Carrier Concentration Profiles +16

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.6K citations

Wide-bandgap Semiconductor, Engineering, Dimensional Electron Gases +18

Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

M. Stutzmann, W. B. Jackson, C. C. Tsai · Physical review. B, Condensed matter · 1985 · 1.2K citations

Materials Science, Photoluminescence, Engineering +14

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

The origin of visible luminescencefrom “porous silicon”: A new interpretation

Martin S. Brandt, H. D. Fuchs, M. Stutzmann et al. · Solid State Communications · 1992 · 839 citations

Materials Science, Optical Materials, Engineering +9