W. B. Jackson - Concepedia

Author

W. B. Jackson

Palo Alto Research Center

Also Known As

W. B. Jackson, W. JACKSON, W. Jackson, W.B Jackson, W.B. JACKSON, W.B. Jackson, Wm. Jackson

109

Publications

6.2K

Citations

H-Index

Concepts

All Affiliations

Palo Alto Research Center Hewlett-Packard (United States)

About

W. B. Jackson is an author at Palo Alto Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	56	6K
2	Applied Physics	28	50	5.9K
3	Natural Sciences	9	9	1.7K
4	Business	2	2	32
5	Chemical Engineering	1	1	16

W. B. Jackson

Publications

Citations

H-Index

Page 1

	Year	Citations
Photothermal deflection spectroscopy and detection W. B. Jackson, Nabil M. Amer, Albert‐Claude Boccara, Applied Optics Transient GratingSensitive SpectroscopyEngineeringPhysicsLaser Photochemistry	1981	1.4K
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M. Stutzmann, W. B. Jackson, C. C. Tsai Physical review. B, Condensed matter Materials SciencePhotoluminescenceEngineeringPhysicsPhotochemistry	1985	1.2K
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon J. Kakalios, R. A. Street, W. B. Jackson Physical Review Letters Materials ScienceRelaxation ProcessEngineeringPhysicsGlass Transition	1987	621
Hydrogen diffusion in amorphous silicon R. A. Street, C. C. Tsai, J. Kakalios, Philosophical Magazine B SemiconductorsElectronic DevicesBoron DiffusionEngineeringDiffusion Resistance	1987	291
High-performance flexible zinc tin oxide field-effect transistors W. B. Jackson, Randy Hoffman, Gregory S. Herman Applied Physics Letters EngineeringField-effect TransistorsThin Film Process TechnologySemiconductor DeviceElectronic Devices	2005	249
Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon W. B. Jackson, Jessica Marshall, M. D. Moyer Physical review. B, Condensed matter EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsMetastable Defects	1989	187
Hydrogen transport in amorphous silicon W. B. Jackson, C. C. Tsai Physical review. B, Condensed matter EngineeringPhysicsTransport EnergyDiffusive TransportNatural Sciences	1992	158
Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon W. B. Jackson, J. Kakalios Physical review. B, Condensed matter Optical MaterialsEngineeringLight-induced Metastable DefectsSilicon On InsulatorDefect Tolerance	1988	134
Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films N. H. Nickel, N. M. Johnson, W. B. Jackson Applied Physics Letters Materials ScienceHydrogen PassivationEngineeringCrystalline DefectsSurface Science	1993	133
Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon W. B. Jackson, D. K. Biegelsen, R. J. Nemanich, Applied Physics Letters Optical MaterialsEngineeringOptical AbsorptionAbsorption SpectroscopyOptoelectronic Devices	1983	123

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