Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy, +10

Journal of Applied Physics

Wide-bandgap SemiconductorPiezoelectric Polarization ChargesCarrier Concentration ProfilesEngineeringGan Channel +14

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart, +10

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringDimensional Electron GasesPiezoelectric PolarizationSemiconductors +16

Optical constants of epitaxial AlGaN films and their temperature dependence

Daniel Brunner, H. Angerer, E. Bustarret, +5

Journal of Applied Physics

Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringAl Content +14

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart, +10

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringRf Semiconductor +9

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

O. Ambacher, M. Brandt, R. Dimitrov, +6

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Materials ScienceChemical EngineeringHigh Temperature MaterialsEngineeringGrowth Rate +10

Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films

W. Rieger, T. Metzger, H. Angerer, +3

Applied Physics Letters

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorOptical MaterialsEngineering +13

Electron affinity of AlxGa1−xN(0001) surfaces

S Grabowski, M. Schneider, Hermann Nienhaus, +4

Applied Physics Letters

Materials ScienceSurface CharacterizationAluminium NitrideEngineeringCorrosion +9

Playing with Polarity

M. Stutzmann, O. Ambacher, Martin Eickhoff, +7

physica status solidi (b)

Wide-bandgap SemiconductorEngineeringPolitical PolarizationCommunicationElectronic Properties +16

Optical Process for Liftoff of Group III-Nitride Films

M. K. Kelly, O. Ambacher, R. Dimitrov, +2

physica status solidi (a)

Materials ScienceOptical MaterialsOptical ProcessEngineeringOptical Properties +4

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

R. Dimitrov, Michael J. Murphy, J. Smart, +5

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringPiezoelectric PolarizationSemiconductorsTwo-dimensional Electron Gases +16