H. Angerer

Optical constants of epitaxial AlGaN films and their temperature dependence

Daniel Brunner, H. Angerer, E. Bustarret et al. · Journal of Applied Physics · 1997 · 593 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +16

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

H. Angerer, Daniel Brunner, F. Freudenberg et al. · Applied Physics Letters · 1997 · 307 citations · Full text

Downward Bowing, Engineering, Band Gap +18

Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

Caner Değer, E. Born, H. Angerer et al. · Applied Physics Letters · 1998 · 258 citations

Acoustic Methods, Materials Science, Materials Engineering +15

Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films

W. Rieger, T. Metzger, H. Angerer et al. · Applied Physics Letters · 1996 · 227 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +15

Electrocrystallization in pulse electrolysis

N. Ibl, J. Cl. Puippe, H. Angerer · Surface Technology · 1978 · 167 citations

Materials Science, Electrometallurgy, Engineering +3