F. Freudenberg

Optical constants of epitaxial AlGaN films and their temperature dependence

Daniel Brunner, H. Angerer, E. Bustarret et al. · Journal of Applied Physics · 1997 · 593 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +16

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

H. Angerer, Daniel Brunner, F. Freudenberg et al. · Applied Physics Letters · 1997 · 307 citations · Full text

Downward Bowing, Engineering, Band Gap +18

Properties and applications of MBE grown AlGaN

M. Stutzmann, O. Ambacher, A Cros et al. · Materials Science and Engineering B · 1997 · 57 citations

Materials Engineering, Materials Science, Engineering +2

Nitrogen Effusion and Self-Diffusion in Ga¹⁴N/Ga¹⁵N Isotope Heterostructures

O. Ambacher, F. Freudenberg, R. Dimitrov et al. · Japanese Journal of Applied Physics · 1998 · 45 citations

Materials Science, Wide-bandgap Semiconductor, Nitrogen Self-diffusion +12

AlGaN-Based Bragg Reflectors

O. Ambacher, M. Arzberger, Daniel Brunner et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 43 citations · Full text