E. Born

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 553 citations

Natural Sciences, Materials Engineering, Materials Science +17

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

H. Angerer, Daniel Brunner, F. Freudenberg et al. · Applied Physics Letters · 1997 · 310 citations · Full text

Natural Sciences, Materials Science, Physics +17

Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

Caner Değer, E. Born, H. Angerer et al. · Applied Physics Letters · 1998 · 263 citations

Natural Sciences, Materials Science, Physics +16

Surface acoustic wave sensors for high-temperature applications

J. Hornsteiner, E. Born, Gerhard Fischerauer et al. · 2002 · 153 citations

Engineering, Materials Engineering, Materials Science +17

Cation substitution models of congruent LiNbO3 investigated by X-ray and neutron powder diffraction

H. Boysen, F. Frey, T. Metzger et al. · Journal of Physics and Chemistry of Solids · 1994 · 145 citations

Natural Sciences, Materials Engineering, Materials Science +15