E. Born

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 547 citations

Materials Science, Dislocation Densities, Electrical Engineering +14

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

H. Angerer, Daniel Brunner, F. Freudenberg et al. · Applied Physics Letters · 1997 · 307 citations · Full text

Downward Bowing, Engineering, Band Gap +18

Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements

Caner Değer, E. Born, H. Angerer et al. · Applied Physics Letters · 1998 · 258 citations

Acoustic Methods, Materials Science, Materials Engineering +15

Surface acoustic wave sensors for high-temperature applications

J. Hornsteiner, E. Born, Gerhard Fischerauer et al. · 2002 · 152 citations

Engineering, Acoustic Metamaterial, Mechanical Engineering +16

Cation substitution models of congruent LiNbO3 investigated by X-ray and neutron powder diffraction

H. Boysen, F. Frey, T. Metzger et al. · Journal of Physics and Chemistry of Solids · 1994 · 143 citations

Materials Science, Inorganic Chemistry, Cation Substitution Models +5