R. Höpler

Optical constants of epitaxial AlGaN films and their temperature dependence

Daniel Brunner, H. Angerer, E. Bustarret et al. · Journal of Applied Physics · 1997 · 593 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +16

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 547 citations

Materials Science, Dislocation Densities, Electrical Engineering +14

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

H. Angerer, Daniel Brunner, F. Freudenberg et al. · Applied Physics Letters · 1997 · 307 citations · Full text

Downward Bowing, Engineering, Band Gap +18

Raman study of the optical phonons in AlxGa1−xN alloys

A. Cros, H. Angerer, O. Ambacher et al. · Solid State Communications · 1997 · 65 citations

Materials Science, Aluminium Nitride, Optical Materials +5

Properties and applications of MBE grown AlGaN

M. Stutzmann, O. Ambacher, A Cros et al. · Materials Science and Engineering B · 1997 · 57 citations

Materials Engineering, Materials Science, Engineering +2