D. Doppalapudi

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 613 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R. Singh, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1997 · 485 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11

The role of dislocation scattering in <i>n</i>-type GaN films

H. M. Ng, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1998 · 432 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +9

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi, Soumendra N. Basu, Karl Ludwig et al. · Journal of Applied Physics · 1998 · 227 citations · Full text

Materials Engineering, Materials Science, Epitaxial Growth +13

Surface and bulk electronic structure of thin-film wurtzite GaN

S. S. Dhesi, Cristian Stagarescu, Kevin E. Smith et al. · Physical review. B, Condensed matter · 1997 · 111 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15