R. Singh

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R. Singh, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1997 · 485 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11

Blue-violet light emitting gallium nitride <i>p</i>-<i>n</i> junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy

R. J. Molnar, R. Singh, T. D. Moustakas · Applied Physics Letters · 1995 · 145 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20

Hydrogenation of <i>p</i>-type gallium nitride

Martin S. Brandt, N. M. Johnson, R. J. Molnar et al. · Applied Physics Letters · 1994 · 133 citations

Materials Science, Inorganic Chemistry, Wide-bandgap Semiconductor +11

Intensity dependence of photoluminescence in GaN thin films

R. Singh, R. J. Molnar, M. Selim Ünlü et al. · Applied Physics Letters · 1994 · 104 citations

Photoluminescence, Engineering, Physics +10

Electronic structure of GaN measured using soft-x-ray emission and absorption

Cristian Stagarescu, L.-C. Duda, Kevin E. Smith et al. · Physical review. B, Condensed matter · 1996 · 70 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12