N. M. Johnson

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.5K citations · Full text

Engineering, Materials Science, Physics +17

Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 673 citations

Engineering, Materials Engineering, Materials Science +4

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Werner Götz, N. M. Johnson, J. Walker et al. · Applied Physics Letters · 1996 · 500 citations

Engineering, Materials Engineering, Materials Science +17

Activation energies of Si donors in GaN

Werner Götz, N. M. Johnson, C. Chen et al. · Applied Physics Letters · 1996 · 482 citations

Engineering, Materials Engineering, Materials Science +17

Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

N. M. Johnson, Conyers Herring, D. J. Chadi · Physical Review Letters · 1986 · 397 citations

Natural Sciences, Materials Science, Physics +17