Srabanti Chowdhury - Concepedia

Author

Srabanti Chowdhury

Also Known As

Chowdhury, Srabanti, Chowdhury, Srabanti; Dutta, Maitreya; Nemanich, Robert; Koeck, Franz, Parker, S Chowdhury, S. Chowdhury, S.C. Chowdhury, Sakib Rahman Chowdhury, Srabanti Chowdhury

218

Publications

5.4K

Citations

H-Index

Concepts

All Affiliations

Stanford University University of California, Davis University of California, Santa Barbara Arizona State University Georgia Institute of Technology

About

Srabanti Chowdhury is an author at Stanford University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	68	4.4K
2	Applied Physics	34	66	4.3K
3	Electrical Engineering	34	64	4.3K
4	Computer Engineering	2	2	64
5	Natural Sciences	1	1	33

Srabanti Chowdhury

Publications

Citations

H-Index

Page 1

	Year	Citations
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis, Advanced Electronic Materials SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesUwbg Semiconductor Materials	2017	1.4K
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure Srabanti Chowdhury, Umesh K. Mishra IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPower DeviceApplied PhysicsPower Semiconductor Device	2013	191
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringSuppress Dispersion	2011	178
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPlasma ExposureNanoelectronics	2008	161
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Srabanti Chowdhury, Brian L. Swenson, Man Hoi Wong, Semiconductor Science and Technology	2013	150
Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling Mohamadali Malakoutian, D. Field, Nicholas Hines, ACS Applied Materials & Interfaces	2021	113
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Dong Ji, Matthew A. Laurent, Anchal Agarwal, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorActive Mg-doped GanElectrical EngineeringEngineeringOff Trench Cavet	2016	97
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Ramya Yeluri, Jing Lu, Christophe A. Hurni, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringBuried P/n JunctionEngineeringHigh Conductivity	2015	96
880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Dong Ji, Anchal Agarwal, Haoran Li, IEEE Electron Device Letters	2018	90
Distribution of donor states on etched surface of AlGaN/GaN heterostructures Masataka Higashiwaki, Srabanti Chowdhury, Mao-Sheng Miao, Journal of Applied Physics Oxide HeterostructuresSemiconductorsElectrical EngineeringElectron DensityEngineering	2010	89

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