Umesh K. Mishra - Concepedia

Author

Umesh K. Mishra

University of California, Santa Barbara ORCID

Also Known As

Mishra, Umesh, Mishra, Umesh K., U K Mishra, U. K. MISHRA, U. K. Mishra, U. Mishra, U.K Mishra, U.K. Mishra, U.K. Mshra, UMESH K. MISHRA

1.2K

Publications

54.8K

Citations

108

H-Index

178

Concepts

All Affiliations

University of California, Santa Barbara The Ohio State University HRL Laboratories (United States)

About

Umesh K. Mishra is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	105	576	49.7K
2	Applied Physics	105	546	48.9K
3	Natural Sciences	14	14	936
4	Education	1	1	93
5	Medicine	1	1	14

Umesh K. Mishra

636

Publications

52.8K

Citations

108

H-Index

Page 1

	Year	Citations
AlGaN/GaN HEMTs-an overview of device operation and applications Umesh K. Mishra, P. Parikh, Yifeng Wu Proceedings of the IEEE Wide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan/gan Hemts-an OverviewRf Semiconductor	2002	2.2K
GaN-Based RF Power Devices and Amplifiers Umesh K. Mishra, Likun Shen, T.E. Kazior, Proceedings of the IEEE Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorGan Hemt Technologies	2008	1.7K
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis, Advanced Electronic Materials SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesUwbg Semiconductor Materials	2017	1.4K
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R. Vetury, N.Q. Zhang, S. Keller, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceVirtual Gate	2001	1.4K
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors J. P. Ibbetson, P. Fini, K. D. Ness, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2000	1.1K
30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesRf Semiconductor	2004	1.1K
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements John F. Muth, J. H. Lee, I. K. Shmagin, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringAbsorption SpectroscopyOptical Properties	1997	746
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Nature Materials SemiconductorsMaterials ScienceAluminium NitrideEngineeringApplied Physics	2006	682
Very-high power density AlGaN/GaN HEMTs Yifeng Wu, D. Kapolnek, J. P. Ibbetson, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsApplied Physics	2001	549
High-power AlGaN/GaN HEMTs for Ka-band applications Tomás Palacios, A. Chakraborty, Siddharth Rajan, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh-frequency CharacterizationRf Semiconductor	2005	485

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