J. P. Ibbetson

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, P. Fini, K. D. Ness et al. · Applied Physics Letters · 2000 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 435 citations

Engineering, Materials Science, Physics +17

Electrical characterization of GaN p-n junctions with and without threading dislocations

P. Kozodoy, J. P. Ibbetson, H. Marchand et al. · Applied Physics Letters · 1998 · 357 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High-performance (Al,Ga)N-based solar-blind ultraviolet <i>p–i–n</i> detectors on laterally epitaxially overgrown GaN

Giacinta Parish, S. Keller, P. Kozodoy et al. · Applied Physics Letters · 1999 · 318 citations

Engineering, Electrical Engineering, Materials Science +17