I. P. Smorchkova - Concepedia

Author

I. P. Smorchkova

University of California, Santa Barbara

Also Known As

I P Smorchkova, I. P. Smorchkova, I. Smorchkova, I.P Smorchkova, I.P. Smorchkova, Iolia P. Smorchkova

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Pennsylvania State University HRL Laboratories (United States)Wright-Patterson Air Force Base

About

I. P. Smorchkova is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	24	3.1K
2	Applied Physics	20	24	3.1K
3	Electrical Engineering	15	17	2K
4	Natural Sciences	3	3	182
5	Materials Engineering	1	1	122

I. P. Smorchkova

Publications

3.3K

Citations

H-Index

Page 1

	Year	Citations
Room-Temperature Spin Memory in Two-Dimensional Electron Gases James M. Kikkawa, I. P. Smorchkova, Nitin Samarth, Science SemiconductorsQuantum ScienceSpintronicsEngineeringPhysics	1997	531
AlGaN/AlN/GaN high-power microwave HEMT L. Shen, S. Heikman, Brendan Moran, IEEE Electron Device Letters Wide-bandgap SemiconductorAlloy ScatteringElectrical EngineeringEngineeringNormal Hemts	2001	482
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	1999	433
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, L. Chen, Thomas E. Mates, Journal of Applied Physics Materials ScienceSemiconductorsAluminium NitrideWide-bandgap SemiconductorEngineering	2001	323
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy B. Heying, I. P. Smorchkova, C. Poblenz, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductorsWide-bandgap SemiconductorsMolecular Beam Epitaxy	2000	195
Current instabilities in GaN-based devices I. Daumiller, D. Théron, Christophe Gaquière, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2001	150
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, E. Haus, B. Heying, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorMg Layers	2000	122
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers I. P. Smorchkova, S. Keller, S. Heikman, Applied Physics Letters Materials ScienceAln Barrier WidthElectrical EngineeringTwo-dimensional Electron-gas Aln/ganEngineering	2000	117
Spin Transport and Localization in a Magnetic Two-Dimensional Electron Gas I. P. Smorchkova, Nitin Samarth, J. M. Kikkawa, Physical Review Letters EngineeringLow-dimensional MagnetismSpin-charge ConversionSpin SystemsMagnetic Resonance	1997	110
Gallium nitride based transistors Huili Grace Xing, S. Keller, Y. F. Wu, Journal of Physics Condensed Matter	2001	108

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