C. Poblenz

High-power AlGaN/GaN HEMTs for Ka-band applications

Tomás Palacios, A. Chakraborty, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 485 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

B. Heying, I. P. Smorchkova, C. Poblenz et al. · Applied Physics Letters · 2000 · 195 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +17

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

C. Poblenz, Patrick Waltereit, Siddharth Rajan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 180 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +8

Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces

H. Zhang, Eric J Miller, Edward T. Yu et al. · Applied Physics Letters · 2004 · 136 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

Siddharth Rajan, Patrick Waltereit, C. Poblenz et al. · IEEE Electron Device Letters · 2004 · 100 citations

Wide-bandgap Semiconductor, Engineering, Power Performance +16