C. Poblenz

High-power AlGaN/GaN HEMTs for Ka-band applications

Tomás Palacios, A. Chakraborty, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 492 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

B. Heying, I. P. Smorchkova, C. Poblenz et al. · Applied Physics Letters · 2000 · 196 citations

Natural Sciences, Materials Science, Physics +17

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

C. Poblenz, Patrick Waltereit, Siddharth Rajan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 181 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces

H. Zhang, Eric J Miller, Edward T. Yu et al. · Applied Physics Letters · 2004 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

Siddharth Rajan, Patrick Waltereit, C. Poblenz et al. · IEEE Electron Device Letters · 2004 · 102 citations · Full text

Engineering, Electrical Engineering, Materials Science +17