B. Heying - Concepedia

Concepedia

Author

B. Heying

University of California, Santa Barbara

Also Known As

B Heying, B. Heying, Ben Heying

62

Publications

5.5K

Citations

28

H-Index

32

Concepts

All Affiliations

University of California, Santa Barbara Northrop Grumman (United States)The Ohio State University Wright-Patterson Air Force Base

BH

About

B. Heying is an author at University of California, Santa Barbara specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	41	5.2K
2	Applied Physics	26	39	5.4K
3	Electrical Engineering	20	28	1.9K
4	Materials Engineering	8	8	1.2K
5	Chemistry	1	1	52

B. Heying

×

42

Publications

5.5K

Citations

28

H-Index

	Year	Citations
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films B. Heying, Xuemei Wu, S. Keller, Applied Physics Letters Materials ScienceDislocation DensitiesEpitaxial GrowthEngineeringDislocation Interaction	1996	825
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy B. Heying, R. Averbeck, L. F. Chen, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineeringPhysics	2000	482
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	1999	433
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy E. J. Tarsa, B. Heying, Xuemei Wu, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductorsMocvd-grown TemplateGa Fluxes	1997	402
Dislocation mediated surface morphology of GaN B. Heying, E. J. Tarsa, C. R. Elsass, Journal of Applied Physics Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects	1999	400
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire D. Kapolnek, Xuehua Wu, B. Heying, Applied Physics Letters EngineeringGan FilmsStructural EvolutionEpitaxial GrowthDislocation Density	1995	318
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates Julia W. P. Hsu, Michael J. Manfra, R. J. Molnar, Applied Physics Letters Materials ScienceExcess Reverse-bias LeakageElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	299
Dislocation generation in GaN heteroepitaxy Xuehua Wu, P. Fini, E. J. Tarsa, Journal of Crystal Growth Categoryiii-v SemiconductorDislocation GenerationApplied PhysicsGan Power Device	1998	290
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition S. Keller, B.P. Keller, Yifeng Wu, Applied Physics Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringCrystalline Defects	1996	269
Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN Xuehua Wu, D. Kapolnek, E. J. Tarsa, Applied Physics Letters Materials ScienceLayer ThicknessEngineeringPhysicsCrystalline Defects	1996	236

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