B. Heying

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 825 citations

Materials Science, Dislocation Densities, Epitaxial Growth +12

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen et al. · Journal of Applied Physics · 2000 · 482 citations

Materials Science, Wide-bandgap Semiconductor, Epitaxial Growth +15

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 433 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu et al. · Journal of Applied Physics · 1997 · 402 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16

Dislocation mediated surface morphology of GaN

B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 400 citations

Materials Engineering, Materials Science, Epitaxial Growth +13