R. Averbeck

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen et al. · Journal of Applied Physics · 2000 · 482 citations

Materials Science, Wide-bandgap Semiconductor, Epitaxial Growth +15

Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

M. Schuster, P O Gervais, B. Jobst et al. · Journal of Physics D Applied Physics · 1999 · 134 citations

Wide-bandgap Semiconductor, Engineering, Chemical Composition +17

Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy

R. Averbeck, Lutz Geelhaar, H. Riechert et al. · Journal of Applied Physics · 2003 · 124 citations

Materials Science, Growth Diagram, Aluminium Nitride +14

Low threshold InGaAsN/GaAs lasers beyond 1500nm

G. Jaschke, R. Averbeck, Lutz Geelhaar et al. · Journal of Crystal Growth · 2005 · 103 citations

Photonics, Engineering, Laser Science +5

Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mn/><mml:mi>¯</mml:mi><mml:mo>)</mml:mo></mml:math>surfaces

Gregor Koblmüller, R. Averbeck, Henning Riechert et al. · Physical Review B · 2004 · 100 citations