H. Riechert

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen et al. · Journal of Applied Physics · 2000 · 485 citations

Engineering, Materials Engineering, Materials Science +17

Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

M. Hetterich, Martin D. Dawson, A. Yu. Egorov et al. · Applied Physics Letters · 2000 · 216 citations

Engineering, Electrical Engineering, Materials Science +17

Monolithic VCSEL with InGaAsN active region emittingat 1.28 µmand CW output power exceeding 500 µW at room temperature

G. Steinle, H. Riechert, A. Yu. Egorov · Electronics Letters · 2001 · 162 citations

Engineering, Electrical Engineering, Materials Science +12

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Vincent Consonni, M. Knelangen, Lutz Geelhaar et al. · Physical Review B · 2010 · 158 citations

Natural Sciences, Materials Engineering, Materials Science +17

Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Stanko Tomić, Eoin P. O’Reilly, R. Fehse et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2003 · 142 citations · Full text

Engineering, Electrical Engineering, Materials Science +17