Concepedia

Author

G. Steinle

Infineon Technologies (Germany)

Also Known As

G Steinle, G. Steinle, Gunther Steinle

29

Publications

641

Citations

8

H-Index

21

Concepts

All Affiliations

Infineon Technologies (Germany)
GS

About

G. Steinle is an author at Infineon Technologies (Germany) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

5

5

244

2

Applied Physics

5

5

244

3

Electrical Engineering

3

3

211

4

Chemistry

1

1

17

5

Materials Engineering

1

1

17

G. Steinle

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8

Publications

584

Citations

8

H-Index

YearCitations

Monolithic VCSEL with InGaAsN active region emittingat 1.28 µmand CW output power exceeding 500 µW at room temperature

G. Steinle, H. Riechert, A. Yu. Egorov

Electronics Letters

2001

160

Development of InGaAsN-based 1.3  m VCSELs

Henning Riechert, A. Ramakrishnan, G. Steinle

Semiconductor Science and Technology

2002

145

Data transmission up to 10 Gbit/s with 1.3 µmwavelength InGaAsN VCSELs

G. Steinle, F. Mederer, M. Kicherer,

Electronics Letters

2001

93

Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

A. Ramakrishnan, G. Steinle, D. Supper,

Electronics Letters

2002

87

Power and Spectral Range Characteristics for Optical Power Converters

Simon Fafard, Denis Masson, J. G. Werthen,

Energies

2021

36

Accelerated aging of 28 Gb s<sup>−1</sup>850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures

J.‐R. Kropp, G. Steinle, G.E. Schafer,

Semiconductor Science and Technology

2015

30

Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE

A. Ramakrishnan, G. Steinle, D. Supper,

Journal of Crystal Growth

2002

17

High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

M. Ortsiefer, R. Shau, G. Böhm,

2002

16

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