A. Ramakrishnan

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

U. Kaufmann, M. Kunzer, H. Obloh et al. · Physical review. B, Condensed matter · 1999 · 276 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Development of InGaAsN-based 1.3  m VCSELs

Henning Riechert, A. Ramakrishnan, G. Steinle · Semiconductor Science and Technology · 2002 · 145 citations

Photonics, Electrical Engineering, Engineering +15

Self-compensation in Mg doped p-type GaN grown by MOCVD

H. Obloh, K. H. Bachem, U. Kaufmann et al. · Journal of Crystal Growth · 1998 · 134 citations

Electrical Engineering, Engineering, Applied Physics +4

Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

A. Ramakrishnan, G. Steinle, D. Supper et al. · Electronics Letters · 2002 · 87 citations