A. Ramakrishnan - Concepedia

Author

A. Ramakrishnan

Fraunhofer Institute for Applied Solid State Physics ORCID

Also Known As

A Ramakrishnan, A. Ramakrishnan, Arun Ramakrishnan

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Infineon Technologies (Germany)Philipps University of Marburg

About

A. Ramakrishnan is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	1.1K
2	Applied Physics	11	11	1.1K
3	Electrical Engineering	6	6	968
4	Natural Sciences	3	3	120
5	Chemistry	2	2	372

A. Ramakrishnan

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Nature of the 2.8 eV photoluminescence band in Mg doped GaN U. Kaufmann, M. Kunzer, Matthias Maier, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsEv Photoluminescence	1998	355
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN U. Kaufmann, M. Kunzer, H. Obloh, Physical review. B, Condensed matter Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineeringPhysics	1999	276
Development of InGaAsN-based 1.3 m VCSELs Henning Riechert, A. Ramakrishnan, G. Steinle Semiconductor Science and Technology PhotonicsElectrical EngineeringEngineeringElectronic EngineeringApplied Physics	2002	145
Self-compensation in Mg doped p-type GaN grown by MOCVD H. Obloh, K. H. Bachem, U. Kaufmann, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	1998	134
Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region A. Ramakrishnan, G. Steinle, D. Supper, Electronics Letters	2002	87
Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering D. Behr, J. Wagner, A. Ramakrishnan, Applied Physics Letters EngineeringSurface-enhanced Raman ScatteringLaser ApplicationsLight Scattering SpectroscopySpectroscopic Property	1998	57
Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells H. Grüning, K. Koháry, S. D. Baranovskiǐ, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Localized Excited StateEngineeringExcitation Energy TransferGainnas/ganas Quantum WellElectronic Excited State	2003	44
In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN C. Manz, M. Kunzer, H. Obloh, Applied Physics Letters Deep BandSemiconductor TechnologyElectrical EngineeringN/gan Band OffsetsEngineering	1999	37
Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering J. Wagner, A. Ramakrishnan, H. Obloh, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorEngineeringPhysicsIngan/gan Quantum Wells	1999	31
Spectroscopic ellipsometry characterization of (InGa)N on GaN J. Wagner, A. Ramakrishnan, D. Behr, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsPseudodielectric Function	1998	21

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