H. Obloh

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

U. Kaufmann, M. Kunzer, H. Obloh et al. · Physical review. B, Condensed matter · 1999 · 276 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Hole conductivity and compensation in epitaxial GaN:Mg layers

U. Kaufmann, P. Schlotter, H. Obloh et al. · Physical review. B, Condensed matter · 2000 · 268 citations

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

P. Schlotter, J. Baur, Ch Hielscher et al. · Materials Science and Engineering B · 1999 · 230 citations

Electrical Engineering, Solid-state Lighting, Engineering +7

Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire

M. Seelmann‐Eggebert, J.L. Weyher, H. Obloh et al. · Applied Physics Letters · 1997 · 185 citations

Materials Engineering, Proper Crystal Structure, Electrical Engineering +14