H. Obloh - Concepedia

Author

H. Obloh

Fraunhofer Institute for Applied Solid State Physics

Also Known As

H Obloh, H. Obloh, Harald Obloh, Obloh, H.

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Ferdinand-Braun-Institut National Institute of Advanced Industrial Science and Technology United States Naval Research Laboratory Fraunhofer-Gesellschaft

About

H. Obloh is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	42	2.6K
2	Applied Physics	24	37	2.4K
3	Natural Sciences	6	6	242
4	Biomedical Engineering	1	1	48
5	Biomolecular Engineering	1	1	34

H. Obloh

Publications

Citations

H-Index

Page 1

	Year	Citations
Nature of the 2.8 eV photoluminescence band in Mg doped GaN U. Kaufmann, M. Kunzer, Matthias Maier, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsEv Photoluminescence	1998	355
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN U. Kaufmann, M. Kunzer, H. Obloh, Physical review. B, Condensed matter Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineeringPhysics	1999	276
Hole conductivity and compensation in epitaxial GaN:Mg layers U. Kaufmann, P. Schlotter, H. Obloh, Physical review. B, Condensed matter	2000	268
Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs P. Schlotter, J. Baur, Ch Hielscher, Materials Science and Engineering B Electrical EngineeringSolid-state LightingEngineeringApplied PhysicsNew Lighting Technology	1999	230
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire M. Seelmann‐Eggebert, J.L. Weyher, H. Obloh, Applied Physics Letters Materials EngineeringProper Crystal StructureElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	185
Self-compensation in Mg doped p-type GaN grown by MOCVD H. Obloh, K. H. Bachem, U. Kaufmann, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	1998	134
Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy Masanobu Yoshikawa, M. Kunzer, J. Wagner, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesBand-gap RenormalizationSemiconductors	1999	128
Electrochemical hydrogen termination of boron-doped diamond René Hoffmann, Armin Kriele, H. Obloh, Applied Physics Letters Materials ScienceDiamond-like CarbonChemical EngineeringEngineeringWater Contact Angle	2010	103
Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes Hiromitsu Kato, Marco Wolfer, Christoph Schreyvogel, Applied Physics Letters EngineeringOptoelectronic DevicesNitrogen-vacancy CentersSemiconductorsElectronic Devices	2013	73
Nanocrystalline Diamond Nanoelectrode Arrays and Ensembles Jakob Hees, René Hoffmann, Armin Kriele, ACS Nano EngineeringNanosphere LithographyE-beam LithographyChemical EngineeringNanoengineering	2011	72

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