Statistics
Publications
46
Citations
3K
H-Index
28
Active since
1984
H. Obloh is an author at Fraunhofer Institute for Applied Solid State Physics specializing in materials science, semiconductor materials, and engineering.
Publications per year
1984–2013
46
46
Nature of the 2.8 eV photoluminescence band in Mg doped GaN
U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations
Hole conductivity and compensation in epitaxial GaN:Mg layers
U. Kaufmann, P. Schlotter, H. Obloh et al. · Physical review. B, Condensed matter · 2000 · 270 citations
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
M. Seelmann‐Eggebert, J.L. Weyher, H. Obloh et al. · Applied Physics Letters · 1997 · 185 citations
Natural Sciences, Materials Engineering, Materials Science +17
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