J. Baur

High-Power and High-Efficiency InGaN-Based Light Emitters

A. Laubsch, M. Sabathil, J. Baur et al. · IEEE Transactions on Electron Devices · 2009 · 336 citations

White Oled, Photonics, Electrical Engineering +14

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

P. Schlotter, J. Baur, Ch Hielscher et al. · Materials Science and Engineering B · 1999 · 230 citations

Electrical Engineering, Solid-state Lighting, Engineering +7

Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron

J. Baur, K. Maier, M. Kunzer et al. · Applied Physics Letters · 1994 · 115 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +18

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

J. Baur, K. Maier, M. Kunzer et al. · Applied Physics Letters · 1994 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +15

New developments in green LEDs

Matthias Peter, A. Laubsch, Werner Bergbauer et al. · physica status solidi (a) · 2009 · 90 citations

White Oled, Photonics, Electrical Engineering +14