Werner Bergbauer

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Werner Bergbauer, Ch. Kölper, N. Linder et al. · Nanotechnology · 2010 · 143 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

The nanorod approach: GaN NanoLEDs for solid state lighting

A. Waag, Xue Wang, Sönke Fündling et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 142 citations

Materials Science, Abstract Vertically, Electrical Engineering +15

Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

S. F. Li, S. Fuendling, X. Wang et al. · Crystal Growth & Design · 2011 · 122 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +15

On the origin of IQE‐‘droop’ in InGaN LEDs

A. Laubsch, M. Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 113 citations

Engineering, Optoelectronic Devices, Ingan Leds +17

New developments in green LEDs

Matthias Peter, A. Laubsch, Werner Bergbauer et al. · physica status solidi (a) · 2009 · 90 citations

White Oled, Photonics, Electrical Engineering +14