Matthias Peter

High-Power and High-Efficiency InGaN-Based Light Emitters

A. Laubsch, M. Sabathil, J. Baur et al. · IEEE Transactions on Electron Devices · 2009 · 337 citations

Engineering, Electrical Engineering, Materials Science +17

Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes

Dario Schiavon, Michael Binder, Matthias Peter et al. · physica status solidi (b) · 2012 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

On the origin of IQE‐‘droop’ in InGaN LEDs

A. Laubsch, M. Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

New developments in green LEDs

Matthias Peter, A. Laubsch, Werner Bergbauer et al. · physica status solidi (a) · 2009 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Realization and modeling of a pseudomorphic (GaAs1−<i>x</i>Sb<i>x</i>–In<i>y</i>Ga1−<i>y</i>As)/GaAs bilayer-quantum well

Matthias Peter, K. Winkler, Martin Maier et al. · Applied Physics Letters · 1995 · 88 citations

Engineering, Materials Engineering, Materials Science +17