A. Laubsch

High-Power and High-Efficiency InGaN-Based Light Emitters

A. Laubsch, M. Sabathil, J. Baur et al. · IEEE Transactions on Electron Devices · 2009 · 336 citations

White Oled, Photonics, Electrical Engineering +14

On the origin of IQE‐‘droop’ in InGaN LEDs

A. Laubsch, M. Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 113 citations

Engineering, Optoelectronic Devices, Ingan Leds +17

New developments in green LEDs

Matthias Peter, A. Laubsch, Werner Bergbauer et al. · physica status solidi (a) · 2009 · 90 citations

White Oled, Photonics, Electrical Engineering +14

Quality and thermal stability of thin InGaN films

Desirée Queren, Marc Schillgalies, Adrian Avramescu et al. · Journal of Crystal Growth · 2009 · 64 citations

Materials Engineering, Materials Science, Engineering +6

Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

S. Borisova, H. Eisele, M. Dähne et al. · Applied Physics Letters · 2008 · 61 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16