Robust excitons inhabit soft supramolecular nanotubes

Dörthe M. Eisele, Dylan H. Arias, Xiaofeng Fu, +11

Proceedings of the National Academy of Sciences

Change of InAs/GaAs quantum dot shape and composition during capping

H. Eisele, A. Lenz, R. Heitz, +5

Journal of Applied Physics

Materials ScienceIi-vi SemiconductorEngineeringTunneling MicroscopyPhysics +12

Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

H. Eisele, O. Flebbe, T. Kalka, +5

Applied Physics Letters

EngineeringMicroscopyCross-sectional Scanning-tunneling MicroscopyChemistrySemiconductor Nanostructures +17

Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

A. Lenz, Rainer Timm, H. Eisele, +6

Applied Physics Letters

Materials ScienceIi-vi SemiconductorEngineeringTunneling MicroscopyPhysics +12

Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

O. Flebbe, H. Eisele, T. Kalka, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringStrained Quantum DotsChemistryGaas LayerSemiconductor Nanostructures +17

Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

S. Borisova, H. Eisele, M. Dähne, +2

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringSemiconductorsQuantum MaterialsBond Surface States +14

20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

F. Hopfer, A. Mutig, G. Fiol, +15

IEEE Journal of Selected Topics in Quantum Electronics

Quantum PhotonicsEngineeringOptoelectronic DevicesSurface-emitting LasersSubmonolayer Growth +16

Structure and intermixing of GaSb∕GaAs quantum dots

Rainer Timm, H. Eisele, A. Lenz, +8

Applied Physics Letters

Materials ScienceSemiconductorsEngineeringGasb Quantum DotsGasb Content +12

Quantum ring formation and antimony segregation in GaSb∕GaAs nanostructures

Rainer Timm, A. Lenz, H. Eisele, +5

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringNanoclusterQuantum RingsSemiconductor NanostructuresSemiconductors +14

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

L. Lymperakis, P. H. Weidlich, H. Eisele, +7

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringNon-polar GanElectronic StructureIntrinsic Pinning +16