Applied Physics Letters · 2002 · 83 citations · 16 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsQuantum DotsSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsAtomic-resolution ImagingCross-sectional MicroscopyMetalorganic Chemical Vapor DepositionMicroscopyQuantum Dot MaterialsSelf-assembled Quantum DotsSemiconductor Quantum Dots
We present cross-sectional scanning tunneling microscopy results of self-organized In0.8Ga0.2As quantum dots covered by an In0.1Ga0.9As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In0.1Ga0.9As layer show vertical intermixing.
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Atom-selective imaging of the GaAs(110) surface
R. M. Feenstra, Joseph A. Stroscio, J. Tersoff et al. · Physical Review Letters · 1987 · 613 citations
Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
P. W. Fry, I. E. Itskevich, D. J. Mowbray et al. · Physical Review Letters · 2000 · 523 citations · Full text