Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Abstract

We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at 485 °C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images indicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face.