Sönke Fündling

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Werner Bergbauer, Ch. Kölper, N. Linder et al. · Nanotechnology · 2010 · 143 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

The nanorod approach: GaN NanoLEDs for solid state lighting

A. Waag, Xue Wang, Sönke Fündling et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 142 citations

Materials Science, Abstract Vertically, Electrical Engineering +15

Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures

Ünsal Sökmen, Andrej Stranz, Sönke Fündling et al. · Journal of Micromechanics and Microengineering · 2009 · 55 citations

Exemplary Microstructures, Cryogenic Dry Etching, Engineering +26

Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

Xue Wang, Shufeng Li, Sönke Fündling et al. · Crystal Growth & Design · 2012 · 48 citations

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

Werner Bergbauer, Ch. Kölper, N. Linder et al. · Journal of Crystal Growth · 2010 · 44 citations

Materials Science, Engineering, Nanotechnology +4