M. Kunzer

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Origin of defect-related photoluminescence bands in doped and nominally undoped GaN

U. Kaufmann, M. Kunzer, H. Obloh et al. · Physical review. B, Condensed matter · 1999 · 276 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

P. Schlotter, J. Baur, Ch Hielscher et al. · Materials Science and Engineering B · 1999 · 230 citations

Electrical Engineering, Solid-state Lighting, Engineering +7

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants

Christian Goßler, Colin Bierbrauer, Rüdiger Moser et al. · Journal of Physics D Applied Physics · 2014 · 173 citations

Self-compensation in Mg doped p-type GaN grown by MOCVD

H. Obloh, K. H. Bachem, U. Kaufmann et al. · Journal of Crystal Growth · 1998 · 134 citations

Electrical Engineering, Engineering, Applied Physics +4