K. H. Bachem - Concepedia

Author

K. H. Bachem

Fraunhofer Institute for Applied Solid State Physics

Also Known As

K H Bachem, K H. Bachem, K. -H. Bachem, K. Bachem, K. H. BACHEM, K. H. Bachem, K. ‐H. Bachem, K.-H. BACHEM, K.-H. Bachem, K.H Bachem

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Fraunhofer Institute for Physical Measurement Techniques Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble

About

K. H. Bachem is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	38	1.4K
2	Applied Physics	20	37	1.3K
3	Electrical Engineering	17	18	802
4	Natural Sciences	3	3	113
5	Chemistry	2	2	36

K. H. Bachem

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Self-compensation in Mg doped p-type GaN grown by MOCVD H. Obloh, K. H. Bachem, U. Kaufmann, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	1998	134
A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor Y. Gobert, P.J. Tasker, K. H. Bachem IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEngineeringRf SemiconductorPhysicsHigh-frequency Device	1997	103
Realization and modeling of a pseudomorphic (GaAs1−<i>x</i>Sb<i>x</i>–In<i>y</i>Ga1−<i>y</i>As)/GaAs bilayer-quantum well Matthias Peter, K. Winkler, Martin Maier, Applied Physics Letters Wide-bandgap SemiconductorEngineeringBand OffsetOptoelectronic DevicesQuantum Engineering	1995	88
Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition Matthias Peter, N. Herres, F. Fuchs, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringEngineeringCrystalline Defects	1999	88
Resonant Raman scattering in GaN/(AlGa)N single quantum wells D. Behr, R. Niebuhr, J. Wagner, Applied Physics Letters SemiconductorsMaterials SciencePhonon ModesWide-bandgap SemiconductorEngineering	1997	74
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire Jean‐Luc Rouvière, M. Arléry, R. Niebuhr, Materials Science and Engineering B Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power Device	1997	68
Ionized donor bound excitons in GaN Branko Šantić, C. J. Merz, U. Kaufmann, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineeringPhysics	1997	65
Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire Jean‐Luc Rouvière, M. Arléry, R. Niebuhr, MRS Internet Journal of Nitride Semiconductor Research	1996	61
Elastic constants and Poisson ratio in the system AlAs–GaAs Matthias Krieger, H. Sigg, N. Herres, Applied Physics Letters Materials ScienceOptical MaterialsEngineeringPhysicsCrystalline Defects	1995	58
Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering D. Behr, J. Wagner, A. Ramakrishnan, Applied Physics Letters EngineeringSurface-enhanced Raman ScatteringLaser ApplicationsLight Scattering SpectroscopySpectroscopic Property	1998	57

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