K. H. Bachem

Self-compensation in Mg doped p-type GaN grown by MOCVD

H. Obloh, K. H. Bachem, U. Kaufmann et al. · Journal of Crystal Growth · 1998 · 134 citations

Electrical Engineering, Engineering, Applied Physics +4

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor

Y. Gobert, P.J. Tasker, K. H. Bachem · IEEE Transactions on Microwave Theory and Techniques · 1997 · 103 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Realization and modeling of a pseudomorphic (GaAs1−<i>x</i>Sb<i>x</i>–In<i>y</i>Ga1−<i>y</i>As)/GaAs bilayer-quantum well

Matthias Peter, K. Winkler, Martin Maier et al. · Applied Physics Letters · 1995 · 88 citations

Wide-bandgap Semiconductor, Engineering, Band Offset +16

Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition

Matthias Peter, N. Herres, F. Fuchs et al. · Applied Physics Letters · 1999 · 88 citations

Materials Science, Semiconductors, Electrical Engineering +15

Resonant Raman scattering in GaN/(AlGa)N single quantum wells

D. Behr, R. Niebuhr, J. Wagner et al. · Applied Physics Letters · 1997 · 74 citations

Semiconductors, Materials Science, Phonon Modes +13